jiangsu changjiang electronics technology co., ltd to-92mod plastic-encapsulate transistors 2sd667,2sd667a transistor (npn) features z low frequency power amplifier z complementary pair with 2sb647/a maximum ratings (t a =25 unless otherwise noted) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a,i e =0 120 v 2sd667 80 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 2sd667a 100 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 5 v collector cut-off current i cbo v cb =100v,i e =0 10 a emitter cut-off current i ebo v eb =4v,i c =0 10 a 2sd667 60 320 h fe(1) v ce =5v,i c =150ma 2sd667a 60 200 dc current gain h fe(2) v ce =5v,i c =500ma 30 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 1 v base-emitter voltage v be v ce =5v,i c =150ma 1.5 v transition frequency f t v ce =5v,i c =150ma 140 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 12 pf classification of h fe(1) rank b c d 2sd667 60-120 100-200 160-320 range 2sd667a 60-120 100-200 to-92mod 1. emitter 2. collector 3. base 123 symbol parameter value units v cbo collector- base voltage 120 v v ceo collector-emitter voltage 2sd667 2sd667a 80 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 900 mw t j junction temperature 150 t stg storage temperature -55-150
typical characteristics 2sd667,667a
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